After the NMOS VT Adjust implant and subsequent stripping steps, the exposed silicon surface retains physical damage and potential contamination P1.To ensure the integrity of the critical gate dielectric grown in subsequent steps, the process flow introduces a Sacrificial Oxidation (SACOX) step T1.As described in A1, the formation of a sacrificial oxide layer involves the partial oxidation of the exposed silicon material, which converts it into silicon dioxide.This step intentionally consumes th