In advanced backend-of-line (BEOL) and packaging integration, thick dielectrics are often etched in multiple stages (e P4.g., 1-1, 1-2, 2-1) to precisely manage mask erosion, control profile tapering, and mitigate depth-dependent variations P4.The RIE etch ILD 1-2 Etch step serves as the intermediate bulk removal phase within the BONDPAD module for a 40nm BSI CMOS Image Sensor P3.Unlike a standard, shallow Oxide Etch or Nitride Etch, this intermediate step operates in a regime where the aspect r