The N-Well Contact Ion Implantation (IIP) step is integrated into the flow to heavily dope the surface of the previously formed N-Well regions, ensuring a low-resistance ohmic connection for subsequent metal routing T2.Positioned immediately after the "Periphery N-Well Contact IIP - Photo" step, this process specifically physically introduces the dopants into the areas defined by the developed photoresist mask T1.Unlike the preceding photo step, which relies on optical lithography to overcome di