Following the N Photocathode IIPX step, the targeted n-type implant forms the photosensitive core of the Pinned Photodiode (PPD) P4.This implantation utilizes a thick photoresist mask to block energetic ions from the surrounding regions, resulting in heavy ion-bombardment of the resist material T1.The current Ashing & Strip/Clean step is essential to completely remove this ion-hardened photoresist prior to the Pixel Array P-Well IIP photolithography sequence (Engineering Practice).Unlike standar