The N Photocathode IIPX step physically introduces the n-type dopants that form the primary charge collection volume of the pinned photodiode A1.Unlike the preceding 'Photocathode IIPX - Photo' step, which exclusively utilizes optical lithography to define the spatial boundaries of the implant window in the photoresist, this step performs the actual high-energy ballistic insertion of dopant ions into the exposed silicon T1.Positioned after the foundational N-Well and P-Well definitions, this imp