This specific process step directly follows the anisotropic reactive ion etching (RIE) of the silicon nitride sidewall spacer P2.The preceding RIE plasma inevitably generates significant fluorocarbon polymeric residues and leaves metallic or organic contaminants on the exposed active areas P4.To successfully execute the subsequent NMOS Source/Drain and Floating Diffusion (FD) photolithography, the silicon surface must be restored to a pristine, implant-ready state A1.Unlike standard post-implant