The N-Well IIPX (Ion Implantation Process) physically introduces n-type dopants into the silicon substrate to form well regions for PMOS transistors and isolation structures in the CMOS Image Sensor periphery P1.This step is strictly distinct from the preceding "Periphery N-Well IIPX - Photo" step, which merely defines the photoresist mask blocking the implant from the pixel array and NMOS regions P1.Following this implantation, the photoresist must be completely stripped during the subsequent "