The "Ox growth" step within the WELL module serves primarily as a protective screen oxide prior to the subsequent N-Well photolithography and ion implantation steps A2.Following the STI SiN strip and wet deglaze, the silicon surface is left exposed and requires passivation to prevent the degradation of the surface potential T3.Growing a high-quality thermal silicon dioxide layer protects the crystalline silicon from organic photoresist contamination during the upcoming Pre-Litho Cleaning and Pho