The Blanket Boron (B) Well Implant is executed immediately following the removal of the STI silicon nitride mask to establish the baseline p-type conductivity across the semiconductor substrate A2.By performing this step as a blanket implant without a photoresist mask, the process completely avoids the lateral ion scattering and proximity effects typically associated with high-energy masked implants P1.This foundational doping layer serves to isolate adjacent active regions, prevent subsurface p