Following the Periphery P-Well ion implantation step, the silicon wafer remains covered by a patterned photoresist mask that successfully blocked high-energy dopants from entering the complementary N-Well regions P2.This photoresist must be completely stripped to restore a pristine semiconductor surface before applying the next photolithography layer for the Periphery N-Well Contact IIP P1.Unlike simple photoresist stripping operations used after non-implanting steps, this specific well-module s