Following Metal 5 Cu deposition, Cu CMP, and Ta-based liner CMP, the wafer surface is heavily contaminated with abrasive particles, metallic residues, and organic complexes P1.This Post CMP Cleaning step is critical to prepare the surface for the subsequent ILD 6-1 Deposition P2.If these persistent residues are not effectively removed, they will adversely affect device performance by causing leakage currents or short circuits in the densely packed interconnect structures P1.This specific step is