The Ashing & Strip/Clean step within the Contact module is a critical surface preparation operation executed immediately following the Light Shield (LS) Backside Contact Ion Implantation (IIP) and directly preceding the LS/Aperture Grid Barrier Deposition (Engineering Practice).During the upstream IIP step, a photoresist mask is utilized to define the implantation regions where energetic dopant ions penetrate the backside silicon A3.The high-energy ion bombardment causes the photoresist polymer