Following the high-dose N-Well Contact IIP, the photoresist mask must be completely removed before proceeding to the NMOS VT Adjust lithography P1.During the contact implant, the resist absorbs a massive dose of energetic N-type ions, transforming its upper layer into a heavily cross-linked, carbonized crust known as High-Dose Ion-implanted Photoresist (HDI-PR) P1.If this hardened crust and the underlying bulk resist are not entirely eradicated, residual organics will severely degrade the coatab