Following the Backside Passivation IIP, the patterned photoresist used to mask the ion implantation must be completely removed to prepare the surface for subsequent hard mask etching and vacuum baking P1.During the upstream implant, the photoresist absorbs high-energy dopant ions, transforming its top layer into a highly cross-linked, carbonized crust known as High-Dose Ion-implanted Photoresist (HDI-PR) P1.If this hardened crust and underlying bulk resist are not thoroughly eliminated, residual