The Rapid Thermal Processing (RTP) step is executed immediately after the vacuum bake and preceding the RF plasma and high-k dielectric (AlO/TaO) deposition to prepare the backside silicon surface P4.The primary function of this step is to grow a precisely controlled, ultra-thin thermal silicon dioxide (SiO2) interlayer and to thermally heal crystalline defects induced by prior backside thinning and etch steps P1.By forming strong Si–O bonds at the silicon surface, this step directly reduces dan