This process step introduces n-type dopants to form the shared Floating Diffusion (FD) node located between adjacent Transfer Gates (T1 and T2) in a shared-pixel architecture P1.In a CMOS image sensor, the FD acts as the primary charge-to-voltage conversion node, receiving photoelectrons transferred from the pinned photodiodes P3.Performing a dedicated FD implant separately from the standard logic NMOS Source/Drain (S/D) implant allows for independent optimization of the FD doping profile T2.Thi