Following the high-dose NMOS Source/Drain (S/D) and Floating Diffusion (FD) Ion Implantation, the wafer is covered by a photoresist mask that has absorbed a massive dose of energetic n-type dopants T1.This specific ashing and strip/clean step is distinctly required to remove this High-Dose Ion-Implanted Photoresist (HDI-PR) before proceeding to the subsequent N FD tuning implants P2.Unlike standard lithography rework or post-etch ashing, the photoresist here has been fundamentally altered by the