N FD Implant Mask Lithography - 40nm | SemiFlows

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N FD Implant Mask Lithography

N FD (Between T1 and T2) Ion Implantation

92NMOS S/D, FD Implant Mask Lithography 93NMOS S/D, FD Ion Implantation 94Ashing & Strip/Clean 95N FD Implant Mask Lithography 96N FD (Between T1 and T2) Ion Implantation 97Ashing & Strip/Clean

Process Cross-Section

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Step highlight

The lithographic process relies on the photochemical transformation of a photoresist layer upon exposure to deep ultraviolet light, followed by selective development to open the implant windows [T1].

In depth

The "N FD IIP - Photo" step is a critical lithographic masking process designed to selectively expo…

Related steps

N FD (Between T1 and T2) Ion Implantation
Ashing & Strip/Clean