NMOS S/D, FD Implant Mask Lithography - 40nm | SemiFlows

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NMOS S/D, FD Implant Mask Lithography

92NMOS S/D, FD Implant Mask Lithography 93NMOS S/D, FD Ion Implantation 94Ashing & Strip/Clean 95N FD Implant Mask Lithography 96N FD (Between T1 and T2) Ion Implantation 97Ashing & Strip/Clean

Process Cross-Section

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Step highlight

The photoresist must be thick enough to fully stop the high-energy accelerating ions used for deep S/D doping, preventing accidental counter-doping in the PMOS regions [T1].

In depth

This photolithography step patterns the photoresist mask required for the subsequent heavy n-type ion implantation of the NMOS…

Related steps

NMOS S/D, FD Ion Implantation
Ashing & Strip/Clean