The PolySi Anneal step immediately follows the deposition of Arsenic-doped polycrystalline silicon and precedes the photolithography and etching modules for gate formation P1.Its primary function is to thermally activate the implanted or in-situ incorporated dopants within the gate electrode, transforming the highly resistive as-deposited layer into a highly conductive electrode T3.In modern CMOS integration, heavily doped polysilicon is utilized as the gate material because it withstands high-t