The Sidewall Spacer (SWS) Nitride Deposition step is a critical thermal and chemical process that directly follows the SWS pad oxide deposition and precedes the SWS anisotropic back etch T1.Its primary purpose is to form a highly conformal dielectric layer over the polysilicon gate, which will subsequently be etched to create the physical spacer structures flanking the gate T1.These spacers serve a dual role: they provide a precise lateral offset for the deep, high-dose source/drain implants to