Following the anisotropic patterning of the W/TiN Light Shield (LS) grid, the remaining photoresist, bottom anti-reflective coating (BARC), and post-etch polymeric residues must be completely removed to ensure optical clarity and electrical isolation P2.This specific Ashing & Strip/Clean step is critical because the preceding TiN etch, which utilizes halogen-based plasmas, forms a rigid, cross-linked "hard shell" on the photoresist containing titanium, tungsten, and halogen species P2.Failing to