Ta-based Bottom Barrier deposition - 40nm | SemiFlows

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Ta-based Bottom Barrier deposition

245Bond Pad Cavity - Photo 246ILD 6-2 Oxide Etch 247ILD 6-1 SiCN Etch 248ILD 5-2 Oxide Etch 249ILD 5-1 SiCN Etch 250ILD 4-2 Oxide Etch 251ILD 4-1 SiCN Etch 252ILD 3-2 Oxide Etch 253Ashing & Strip/Clean 254Ta-based Bottom Barrier deposition 255Metal 7 Al Metal Deposition 256Ta-based liner deposition 257Pre Litho Cleaning 258Metal 7 Bond Pad - Photo 259Ta-Barrier etch 260Al Metal Etch 261Ta-Barrier etch 262Ashing & Strip/Clean

Process Cross-Section

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Step highlight

From an electrical standpoint, the barrier must form a highly conductive ohmic contact with the underlying metal, avoiding excessive potential barrier heights that would restrict current transport [T1].

In depth

Following the etching of the ILD 3-2 Oxide and ILD 4-1 SiCN layers and the subsequent Ashing and …

Related steps

Bond Pad Cavity - Photo
ILD 6-2 Oxide Etch
ILD 6-1 SiCN Etch
ILD 5-2 Oxide Etch
ILD 5-1 SiCN Etch
ILD 4-2 Oxide Etch