Following the bulk Cu removal in the preceding Cu CMP step, the BEOL planarization process transitions to the barrier CMP phase to clear the Ta-based liner P2.The primary objective of this step is to completely remove the conductive Ta/TaN barrier layer from the field dielectric regions, thereby ensuring strict electrical isolation between adjacent MET3 interconnects A3.If residual barrier material is left on the field, it creates unintended conductive paths that severely degrade yield through i