The ILD 3-2 Deposition step forms the upper inter-metal dielectric layer for the Metal 3 / Via 3 (M3/V3) interconnect level, following the foundational ILD 3-1 layer A1.In advanced Back-End-Of-Line (BEOL) interconnect integration, the dielectric stack is frequently divided into a first dielectric layer serving as the via dielectric (ILD 3-1) and a sequentially deposited second dielectric layer serving as the trench dielectric (ILD 3-2) A2.This bi-layer approach allows the subsequent Via 3 and Me