CESL 2 Etch - 40nm BSI CMOS Image Sensor 40nm

A lower F/C ratio promotes thicker polymer passivation, which can protect sidewalls but might induce an etch stop if the applied ion energy is insufficient [P3].

In a 40nm BSI CIS flow, the bondpad opening process must navigate through multiple dielectric and etch stop layers to expose the pad witho…

A lower F/C ratio promotes thicker polymer passivation, which can protect sidewalls but might induce an etch stop if the applied ion energy is insufficient [P3].

In a 40nm BSI CIS flow, the bondpad opening process must navigate through multiple dielectric and etch stop layers to expose the pad witho…

40nm BSI CMOS Image SensorFree after sign-in

Process Cross-Section

Step highlight

In depth

40nm BSI CMOS Image SensorFree after sign-in

Process Cross-Section

Step highlight

In depth