PMD 3 Etch (BONDPAD) - 40nm | SemiFlows

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PMD 3 Etch

382Bond Pad Opening 1 - Photo 383Upper OCL Coating Etch 384Ashing & Strip/Clean 385Bond Pad Opening 2 - Photo 386Upper Grid Seal Layer Etch 387Optical Pad 3 Etch 388Lower OCL Coating Etch 389Lower OCL Etch 390Optical Pad 2 Etch 391Optical Pad 1 Etch 392Oxide Grid Seal Layer Etch 393BPMD Etch 394HKD/AR2 Etch 395HKD/AR1 Etch 396RIE etch, Si Back etch 397Ashing & Strip/Clean 398Bond Pad Opening 3 - Photo 399Si Etch 400Pad Oxide Etch 401CESL 1 Etch 402CESL 2 Etch 403PMD 1 Etch 404PMD 2 Etch 405PMD 3 Etch 406PMD 4 Etch 407PMD 5 Etch 408RIE etch ILD 1-1 Etch 409RIE etch ILD 1-2 Etch 410RIE etch ILD 2-1 Etch 411RIE etch ILD 2-2 Etch 412RIE etch ILD 3-1 Etch 413RIE etch ILD 3-2 Etch 414Bond Pad Metal 7 Barrier Etch 415Ashing & Strip/Clean

Process Cross-Section

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Step highlight

The reaction rates at the dielectric surface are largely governed by Langmuir–Hinshelwood adsorption kinetics, meaning the overall etch rate is controlled by the balance of reactant adsorption coverage and ion-induced desorption [P4].

In depth

The PMD 3 Etch step is a critical intermediate dielectric removal…

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Related steps

Bond Pad Cavity - Photo
ILD 6-2 Oxide Etch
ILD 6-1 SiCN Etch
ILD 5-2 Oxide Etch
ILD 5-1 SiCN Etch
ILD 4-2 Oxide Etch