Lower OCL Etch (BONDPAD) - 40nm

Anisotropic etching of the main optical lens material at the bondpad periphery removes overlying layers to enable electrical packaging [A1].

In the fabrication of a nanoscale Backside Illuminated (BSI) CMOS Image Sensor, the bondpads located at the device periphery must be cleared of all overlying o…

Anisotropic etching of the main optical lens material at the bondpad periphery removes overlying layers to enable electrical packaging [A1].

In the fabrication of a nanoscale Backside Illuminated (BSI) CMOS Image Sensor, the bondpads located at the device periphery must be cleared of all overlying o…

40nm BSI CMOS Image SensorFree after sign-in

Process Cross-Section

Step highlight

In depth

40nm BSI CMOS Image SensorFree after sign-in

Process Cross-Section

Step highlight

In depth