Following the macroscopic backside silicon via formation via Reactive Ion Etching (RIE), a robust Ashing and Strip/Clean step is mandatory to prepare the surface for the subsequent Bond Pad Opening 3 photolithography P3.The preceding RIE step typically employs a fluorocarbon-heavy plasma chemistry to achieve anisotropic silicon etching by forming a protective polymeric film on the sidewalls A1.Consequently, this stripping step must eradicate the highly crosslinked, fluorine-rich polymeric residu