RIE etch ILD 1-2 Etch - 40nm

Increasing the RF bias power enhances ion directionality and physical sputtering capability, which helps maintain a constant single-pass etch amount at varying depths [P3].

In advanced backend-of-line (BEOL) and packaging integration, thick dielectrics are often etched in multiple stages (e.g. [P4],…

Increasing the RF bias power enhances ion directionality and physical sputtering capability, which helps maintain a constant single-pass etch amount at varying depths [P3].

In advanced backend-of-line (BEOL) and packaging integration, thick dielectrics are often etched in multiple stages (e.g. [P4],…

40nm BSI CMOS Image SensorFree after sign-in

Process Cross-Section

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In depth

40nm BSI CMOS Image SensorFree after sign-in

Process Cross-Section

Step highlight

In depth