RIE etch, Si Back etch (BONDPAD) - 40nm

Reactive Ion Etching is selected over wet anisotropic etching because it provides the strict dimensional control and vertical sidewalls required for high-density bond pad arrays [P1].

In nanoscale Backside Illuminated (BSI) CMOS Image Sensors, accessing the front-side metal routing from the thinned …

Reactive Ion Etching is selected over wet anisotropic etching because it provides the strict dimensional control and vertical sidewalls required for high-density bond pad arrays [P1].

In nanoscale Backside Illuminated (BSI) CMOS Image Sensors, accessing the front-side metal routing from the thinned …

40nm BSI CMOS Image SensorFree after sign-in

Process Cross-Section

Step highlight

In depth

40nm BSI CMOS Image SensorFree after sign-in

Process Cross-Section

Step highlight

In depth