HKD/AR1 Etch (BONDPAD) - 40nm

strict control over plasma-induced damage and charging effects is necessary during the high-k etch to prevent degradation of the adjacent active pixel regions [P2].

In the fabrication of nanoscale Backside Illuminated (BSI) CMOS Image Sensors, forming electrical connections requires etching through …

strict control over plasma-induced damage and charging effects is necessary during the high-k etch to prevent degradation of the adjacent active pixel regions [P2].

In the fabrication of nanoscale Backside Illuminated (BSI) CMOS Image Sensors, forming electrical connections requires etching through …

40nm BSI CMOS Image SensorFree after sign-in

Process Cross-Section

Step highlight

In depth

40nm BSI CMOS Image SensorFree after sign-in

Process Cross-Section

Step highlight

In depth