The ILD 6-2 Oxide Etch step is a critical back-end-of-line (BEOL) process designed to define the upper portion of the bond pad cavity for packaging or wafer-to-wafer integration P3.Following the "Bond Pad Cavity - Photo" step, this process anisotropically removes the thick uppermost silicon dioxide layer (ILD 6-2) and precisely stops on the underlying ILD 6-1 SiCN layer A2.This initiates a sequence of alternating dielectric and barrier etches (Oxide - SiCN - Oxide - SiCN) necessary to expose the