ILD 4-2 Oxide Etch (V4) - 40nm | SemiFlows

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ILD 4-2 Oxide Etch

200METAL 4 TRENCH - Photo 201ILD 3-2 Oxide Etch 202Ashing & Strip/Clean 203Ta-based liner deposition 204Cu Seed deposition 205Metal 4 Cu deposition 206Cu CMP 207Ta-based liner CMP 208Post CMP Cleaning 209ILD 4-1 Deposition 210ILD 4-2 Deposition 211Pre Litho Cleaning 212VIA 4 - Photo 213ILD 4-2 Oxide Etch 214ILD 4-1 SiCN Etch 215Ashing & Strip/Clean

Process Cross-Section

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Step highlight

Adjusting the ratio of polymerizing gases to etchant gases modulates the etch profile; excessive polymerizing gas narrows the via bottom, while insufficient polymerization leads to lateral profile degradation [P1].

In depth

This step transfers the Via 4 (V4) pattern from the photoresist into the ILD 4-2 die…

Related steps

VIA 4 - Photo
ILD 4-1 SiCN Etch
Ashing & Strip/Clean