The "Gate Formation - Photo" step is the most critical lithographic process in the CMOS module, as it defines the physical gate length ($L_g$) of the polysilicon electrode over the active channel region T1.Following the deposition and annealing of the As-doped PolySi, this step applies a photoresist mask that protects the intended gate regions during the subsequent highly anisotropic PolySi etch A2.Precisely defining this dimension is paramount because the gate's electrostatic control over the c