CIS Backside Si, CMP2 (target thickness adjust) - 40nm | SemiFlows

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CIS Backside Si, CMP2 (target thickness adjust)

292CIS Backside Wafer Surface Grind 293CIS Backside Wafer Edge-Grind 294ultrasonic clean 295CIS Backside Si, CMP1 296CIS Backside Si, CMP2 (target thickness adjust)297ultrasonic cleaning

Process Cross-Section

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Step highlight

Colloidal silica slurries are typically selected because their continuous, mild hydration of the silicon surface prevents the direct mechanical fracturing that would otherwise inject new crystallographic defects [P4].

In depth

In the fabrication of Backside Illuminated (BSI) CMOS image sensors, the bulk sil…

Related steps

CIS Backside Wafer Surface Grind
CIS Backside Wafer Edge-Grind
ultrasonic clean
CIS Backside Si, CMP1
ultrasonic cleaning