The process is driven by the competition between chemical etching and ion-assisted physical bombardment, which breaks surface bonds and promotes the desorption of reaction products [P1].
In the 40nm BSI CMOS Image Sensor BEOL flow, the "ILD 5-1 SiCN Etch" step serves as the critical etch-stop breakt…
Sign in to continue through all 417 steps
Sign Up Free