LS/Aperture Grid Barrier Deposition - 40nm

In columnar polycrystalline barrier films, abundant grain boundaries act as low-energy diffusion channels that significantly reduce the activation energy for diffusion [P1].

Following the Backside Contact IIP and subsequent Ashing/Clean steps, the exposed silicon and dielectric surfaces on the wafer…

In columnar polycrystalline barrier films, abundant grain boundaries act as low-energy diffusion channels that significantly reduce the activation energy for diffusion [P1].

Following the Backside Contact IIP and subsequent Ashing/Clean steps, the exposed silicon and dielectric surfaces on the wafer…

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Process Cross-Section

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40nm BSI CMOS Image SensorFree after sign-in

Process Cross-Section

Step highlight

In depth