PMD 3 Etch - 40nm BSI CMOS Image Sensor 40nm | SemiFlows

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PMD 3 Etch

133Metal 1 Gate, S/D Contact Opening - Photo 134PMD 4 Etch 135PMD 3 Etch 136PMD 2 Etch 137PMD 1 Etch 138CESL 2 - Etch 139CESL 1 - Etch 140Pad Oxide Etch 141Ashing & Strip/Clean 142Ti Deposition 143TiN Deposition 144W Deposition 145W CMP 146TiN/Ti CMP 147Post CMP Cleaning 148Low Temperature Anneal

Process Cross-Section

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Step highlight

the PMD 3 Etch must employ highly collimated ion delivery to mitigate localized charge accumulation while ensuring efficient dielectric removal [P1].

In depth

The PMD 3 Etch step is a critical intermediate phase in the high-aspect-ratio contact (HARC) formation module for 40nm BSI CMOS Image Sensors [P2]. F…

Related steps

Metal 0 Gate and S/D Contact Opening - Photo
PMD 3 Etch
PMD 2 Etch
PMD 1 Etch
CESL 2 - Etch
CESL 1 - Etch