After Metal 5 CMP, a pristine dielectric environment must be re-established to isolate the subsequent Metal 6/Via 5 interconnect structures (Engineering Practice).The continuous shrinking of interconnect linewidths causes a rapid increase in resistance-capacitance (RC) delay time, necessitating the use of low-k interlayer dielectrics (ILD) to reduce interconnect capacitance and signal propagation delays P4.ILD 5-2 serves as the primary bulk dielectric layer for the Via 5 level, deposited directl