半导体工艺概念术语表

半导体工艺概念术语表 —— 沉积、刻蚀、CMP、光刻等 —— 每条概念链接到它在 28nm / 40nm / 14nm / 7nm 流程中出现的工艺步骤。

共 28 条工艺概念

金属 3 层6

Copper Chemical Mechanical Polishing
- Cu CMP40nm
- Cu CMP40nm
2 步
Copper Seed Layer Deposition
- Cu Seed deposition40nm
- Cu Seed deposition40nm
2 步

金属 3 层6

Copper Chemical Mechanical Polishing

Copper Seed Layer Deposition

金属 3 层6

Copper Chemical Mechanical Polishing

Copper Seed Layer Deposition

Inter-Layer Dielectric Oxide Trench Etch

Post-Chemical Mechanical Planarization Surface Cleaning

Tantalum Barrier Chemical Mechanical Polishing

Tantalum-based Barrier Liner Deposition

第 1 层层间介质3

Inter-Layer Dielectric Silicon Carbonitride Barrier Deposition

Inter-Layer Dielectric Silicon Dioxide Gap-Fill Deposition

Pre-Lithographic Surface Preparation and Cleaning

金属 1 层3

Copper Chemical Mechanical Planarization

Copper Seed Layer Physical Vapor Deposition

Tantalum Barrier Chemical Mechanical Planarization

正面深沟槽隔离2

Photoresist Ashing and Polymer Removal and Post-Etch Wet Strip and Cleaning

Pre-Lithography Wet Chemical Cleaning

第 2 层层间介质2

Silicon Carbonitride Interlayer Dielectric Deposition

Silicon Dioxide Interlayer Dielectric Deposition

浅槽隔离 (STI)2

Photoresist Ashing and Polymer Removal and Post-Etch Wet Strip and Surface Cleaning

Pre-Lithography Surface Preparation and Cleaning

焊盘1

Photoresist Plasma Ashing and Post-Etch Wet Strip and Cleaning

第 4 层层间介质1

Pre-Lithography Surface Preparation

第 6 层层间介质1

Pre-Lithography Surface Cleaning

金属 0 层1

Pre-Lithographic Surface Preparation and Contamination Removal

金属 2 层1

Post-CMP Cleaning and Surface Passivation

N 型浮动扩散1

Photoresist Plasma Ashing and Post-Implant Wet Strip and Surface Cleaning

预金属介质 (PMD)1

Pre-Metal Dielectric Silicon Dioxide Deposition

第 1 层通孔1

Post-Etch Plasma Ashing and Post-Ashing Wet Strip and Cleaning

第 2 层通孔1

Inter-Layer Dielectric Silicon Carbonitride Etch

阱区注入1

Post-Implantation Photoresist Plasma Ashing and Post-Ashing Wet Chemical Strip and Surface Cleaning