Semiconductor Process Concepts — Glossary

A glossary of semiconductor process concepts — deposition, etch, CMP, lithography and more — each linking to the process steps where it appears across 28nm, 40nm, 14nm and 7nm flows.

28 process concepts

Metal 36

Copper Chemical Mechanical Polishing
- Cu CMP40nm
- Cu CMP40nm
2 steps
Copper Seed Layer Deposition
- Cu Seed deposition40nm
- Cu Seed deposition40nm

Metal 36

Copper Chemical Mechanical Polishing

Copper Seed Layer Deposition

Metal 36

Copper Chemical Mechanical Polishing

Copper Seed Layer Deposition

Inter-Layer Dielectric Oxide Trench Etch

Post-Chemical Mechanical Planarization Surface Cleaning

Tantalum Barrier Chemical Mechanical Polishing

Tantalum-based Barrier Liner Deposition

Interlayer Dielectric 13

Inter-Layer Dielectric Silicon Carbonitride Barrier Deposition

Inter-Layer Dielectric Silicon Dioxide Gap-Fill Deposition

Pre-Lithographic Surface Preparation and Cleaning

Metal 13

Copper Chemical Mechanical Planarization

Copper Seed Layer Physical Vapor Deposition

Tantalum Barrier Chemical Mechanical Planarization

Frontside DTI2

Photoresist Ashing and Polymer Removal and Post-Etch Wet Strip and Cleaning

Pre-Lithography Wet Chemical Cleaning

Interlayer Dielectric 22

Silicon Carbonitride Interlayer Dielectric Deposition

Silicon Dioxide Interlayer Dielectric Deposition

STI2

Photoresist Ashing and Polymer Removal and Post-Etch Wet Strip and Surface Cleaning

Pre-Lithography Surface Preparation and Cleaning

Bond Pad1

Photoresist Plasma Ashing and Post-Etch Wet Strip and Cleaning

Interlayer Dielectric 41

Pre-Lithography Surface Preparation

Interlayer Dielectric 61

Pre-Lithography Surface Cleaning

Metal 01

Pre-Lithographic Surface Preparation and Contamination Removal

Metal 21

Post-CMP Cleaning and Surface Passivation

N Floating Diffusion1

Photoresist Plasma Ashing and Post-Implant Wet Strip and Surface Cleaning

PMD1

Pre-Metal Dielectric Silicon Dioxide Deposition

Via 11

Post-Etch Plasma Ashing and Post-Ashing Wet Strip and Cleaning

Via 21

Inter-Layer Dielectric Silicon Carbonitride Etch

Well1

Post-Implantation Photoresist Plasma Ashing and Post-Ashing Wet Chemical Strip and Surface Cleaning