Technical Blog
Deep dive into the physics and integration logic of semiconductor manufacturing
40nm BSI CMOS Image Sensor Bond-Pad Integration: Process Flow Principles and Integration Logic
Role in the Complete Flow In a 40nm BSI CMOS Image Sensor, the bond-pad integration module sits at the top of the back-end-of-line (BEOL) interconnect stack and serves as the…
40nm BSI CMOS Image Sensor Contact Formation: Process Flow, Mechanisms, and Integration Logic
Role in the Complete Flow In the 40nm Backside Illumination (BSI) CMOS Image Sensor process flow, the contact formation module serves as the critical bridge between…
40nm BSI CMOS Image Sensor Direct-Bond Interconnect Integration Process Flow: Principles and Physical Mechanisms
Role in the Complete Flow In a 40nm backside-illuminated (BSI) CMOS image sensor, the direct-bond interconnect (DBI) module serves as the critical bridge joining the pixel sensor…
40nm BSI CMOS Image Sensor Metal-Zero Interconnect Integration: Process Flow, Mechanisms, and Integration Logic
Role in the Complete Flow In the 40nm back-side illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor fabrication sequence, the metal-zero (MET0)…
40nm BSI CMOS Image Sensor Metal-One Interconnect Integration: Process Flow Principles and Integration Logic
Role in the Complete Flow In the 40nm backside-illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor process flow, the metal-one (MET1) interconnect…
40nm BSI CMOS Image Sensor Metal-Two Interconnect Integration: Process Flow Principles and Device Physics
Role in the Complete Flow The metal-two (MET2) interconnect module in a 40nm BSI CMOS Image Sensor sits at a critical juncture in the frontside metallization sequence, receiving…
40nm BSI CMOS Image Sensor Metal-Three Interconnect Integration: Process Flow Principles and Device Physics
Role in the Complete Flow In the 40nm backside illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor fabrication sequence, the metal-three (MET3)…
40nm BSI CMOS Image Sensor Metal-Four Interconnect Integration: Process Flow Principles and Device Physics
Role in the Complete Flow In the 40nm backside-illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor process flow, the metal-four (MET4) interconnect…
40nm BSI CMOS Image Sensor Metal-Five Interconnect Integration: Process Flow Principles and Integration Logic
Role in the Complete Flow In a 40nm backside illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor, the metal-five (MET5) interconnect module occupies a…
40nm BSI CMOS Image Sensor Metal-Six Interconnect Integration: Process Flow Principles and Integration Logic
Role in the Complete Flow In a 40nm BSI CMOS Image Sensor process flow, the metal-six (MET6) interconnect module serves as one of the uppermost wiring tiers, bridging lower-level…
40nm BSI CMOS Image Sensor Via-One Integration: Process Flow Principles and Device Physics
Role in the Complete Flow In the 40nm BSI CMOS Image Sensor process flow, the via-one (V1) integration module serves as the first inter-metal vertical interconnect opening layer…
40nm BSI CMOS Image Sensor Via-Two Integration: Process Flow Principles and Device Physics
Role in the Complete Flow The via-two (V2) module in a 40nm BSI CMOS Image Sensor serves as the critical inter-level bridging step between the second-level metal interconnect and…