Technical Blog
Deep dive into the physics and integration logic of semiconductor manufacturing
Implant Dose vs Active Dopants: Count the Right Thing
Understand why delivered implant dose, chemical concentration, active dopants and mobile carriers are different quantities.
LDD vs Halo Implants: Two Different Electrostatic Jobs
Compare LDD and halo doping through their locations, polarities, electrostatic roles and resistance tradeoffs.
Selective eSi Source-Drain Integration at 7nm: Physics, Chemistry, and Module Integration
Function in the Complete Flow In sub-10nm logic manufacturing, the integration of selective epitaxial silicon (eSi) in the source and drain regions of n-channel Field-Effect…
Selective Si and SiGe Epitaxy Integration at 14nm: Principles, Strain Kinetics, and Integration Logic
Function in the Complete Flow In modern 14nm FinFET logic fabrication, raised source/drain epitaxy plays a foundational role by simultaneously managing parasitic series…
Principles of Selective SiGe Epitaxy in 28nm Source-Drain Integration
<article Function in the Complete Flow In advanced p-type metal-oxide-semiconductor (pMOS) field-effect transistors within the 28nm Planar Flow, enhancing carrier transport…
14nm FinFET Well and Channel Implant Integration Process Flow: Principles, Mechanisms, and Module Dependencies
Role in the Complete Flow The well and channel implant integration module sits at a critical juncture in the 14nm FinFET process flow, bridging the gap between fin…
14nm FinFET Epitaxial Silicon Source-Drain Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 14nm FinFET epitaxial silicon source-drain (SD_ESI) module occupies a pivotal position in the front-end-of-line (FEOL) process sequence, sitting…
14nm FinFET Embedded Silicon Germanium Source-Drain Integration: Process Flow Principles and Strain Engineering Mechanisms
Role in the Complete Flow In the 14nm FinFET technology node, the embedded silicon germanium (eSiGe) source-drain module serves as one of the most performance-critical…
28nm Planar Well and Channel Implant Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 28nm Planar well and channel implant integration represents a critical inflection point in the front-end-of-line (FEOL) process sequence.
28nm Planar Source-Drain Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The source-drain (SD) module in the 28nm planar logic flow sits at a pivotal position within the front-end-of-line (FEOL) sequence.
28nm Planar Well Formation Process Flow: Integration Logic, Device Physics, and Module Dependencies
Role in the Complete Flow The well formation module in the 28nm planar process flow serves as the foundational doping architecture upon which all subsequent transistor…
40nm BSI CMOS Image Sensor N FD IIP Photolithography Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow In a 40nm backside-illuminated (BSI) CMOS image sensor (CIS), the N-type floating-diffusion ion implantation photolithography (N FD IIP - Photo) step…