Technical Blog
Deep dive into the physics and integration logic of semiconductor manufacturing
40nm BSI CMOS Image Sensor Metal-Four Interconnect Integration: Process Flow Principles and Device Physics
Role in the Complete Flow In the 40nm backside-illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor process flow, the metal-four (MET4)
14nm FinFET Self-Aligned Contact Integration: Process Flow Principles and Mechanisms
Role in the Complete Flow The 14nm FinFET self-aligned contact integration represents a critical module that bridges the front-end-of-line (FEOL) transistor for
28nm Planar Metal-Two Interconnect Integration: Process Flow Principles and Mechanism Deep Dive
Role in the Complete Flow The 28nm Planar metal-two (M2) interconnect integration module occupies a pivotal position in the back-end-of-line (BEOL) sequence of
40nm BSI CMOS Image Sensor Direct-Bond Interconnect Integration Process Flow: Principles and Physical Mechanisms
Role in the Complete Flow In a 40nm BSI CMOS image sensor, the direct-bond interconnect (DBI) module serves as the critical bridge between the pixel sensor wafe
40nm BSI CMOS Image Sensor Via-Five Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 40nm BSI CMOS Image Sensor via-five (V5) integration module occupies a critical position within the multilevel interconnect stack
7nm FinFET Top-Metal Interconnect Integration: M12 Module Process Flow Principles and ESL Chemistry
Role in the Complete Flow The 7nm FinFET top-metal interconnect integration represents the capstone of the back-end-of-line (BEOL) wiring stack, where the final
7nm FinFET M3 Interconnect Integration: Process Flow Principles and ESL Mechanics
Role in the Complete Flow In the 7nm FinFET technology platform, the metal-three (M3) interconnect module occupies a pivotal position within the back-end-of-lin
7nm FinFET Metal-Ten Interconnect Integration: Process Flow Principles, ESL Chemistry, and Module Dependencies
Role in the Complete Flow The 7nm FinFET technology platform represents a generation where extreme ultraviolet (EUV) lithography is comprehensively applied to m
7nm FinFET Metal-Nine Interconnect Integration: ESL Chemistry, Damascene Logic, and Module Dependencies
Role in the Complete Flow The 7nm FinFET metal-nine (M9) interconnect integration module occupies a critical position in the back-end-of-line (BEOL) stack of a
7nm FinFET Contact Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 7nm FinFET contact integration module sits at the critical interface between front-end-of-line (FEOL) transistor formation and mid
7nm FinFET Metal-Eleven Interconnect Integration: Process Flow Principles, ESL Chemistry, and Module Dependencies
Role in the Complete Flow The metal-eleven (M11) interconnect module occupies a critical position within the back-end-of-line (BEOL) stack of a 7nm FinFET techn
40nm BSI CMOS Image Sensor Via-Two Integration: Process Flow Principles and Device Physics
Role in the Complete Flow The via-two (V2) module in a 40nm BSI CMOS Image Sensor serves as the critical inter-level bridging step between the second-level meta