Technical Blog
Deep dive into the physics and integration logic of semiconductor manufacturing
14nm FinFET Contact Trench Integration Process Flow: Physics, Mechanisms, and Module Dependencies
Role in the Complete Flow The 14nm contact trench (CONTACT_CT) integration module occupies a critical transitional position in the overall FinFET fabrication sequence, bridging…
14nm FinFET PMD Surface Recess and Metal-Resistor Integration
The CONTACT_MR module in this site's 14nm FinFET flow begins with PMD Surface Recess and continues into metal-resistor integration and dielectric encapsulation.
14nm FinFET Self-Aligned Contact Integration: Process Flow Principles and Mechanisms
Role in the Complete Flow The 14nm FinFET self-aligned contact integration represents a critical middle-of-line (MOL) module that bridges front-end-of-line (FEOL) transistor…
14nm FinFET Metal-One Interconnect Integration: Process Flow, Physics, and Module Dependencies
Role in the Complete Flow The metal-one (M1) interconnect module in a 14nm FinFET technology serves as the critical bridge between the transistor-level contact architecture and…
14nm FinFET Metal-Two Interconnect Integration: Process Flow, Physics, and Module Dependencies
Role in the Complete Flow In a 14nm FinFET logic technology, the metal-two (M2) interconnect module occupies a pivotal position in the back-end-of-line (BEOL) stack.
28nm Final Dielectric Passivation and Opening Integration
The Actual Scope of the Final Module The final dielectric module in the linked 28nm planar flow prepares and protects the surface left by completed interconnect fabrication.
28nm Planar Contact Formation Process Flow: Integration Principles, Mechanisms, and Module Dependencies
Role in the Complete Flow In the 28nm Planar process flow, the contact formation module occupies a pivotal position: it bridges the front-end-of-line (FEOL) transistor structures…
28nm Planar Metal-One Interconnect Integration: Process Flow Principles and Integration Logic
Role in the Complete Flow The metal-one (M1) interconnect module in the 28nm planar technology node occupies a pivotal position in the back-end-of-line (BEOL) sequence: it is the…
28nm Planar Metal-Two Interconnect Integration: Process Flow Principles and Mechanism Deep Dive
Role in the Complete Flow The 28nm Planar metal-two (M2) interconnect integration module occupies a pivotal position in the back-end-of-line (BEOL) sequence of a 28nm planar CMOS…
28nm Planar Upper-Metal Interconnect Integration: Process Flow Principles and Integration Logic
Role in the Complete Flow The 28nm Planar upper-metal interconnect integration represents a critical transition zone in the back-end-of-line (BEOL) process stack, where the…
28nm Planar Middle-of-Line Integration: Process Flow Principles and Strain Engineering Mechanisms
Role in the Complete Flow The middle-of-line (MOL) module in a 28nm planar logic flow sits at a critical juncture between front-end-of-line (FEOL) transistor formation and…
40nm BSI CMOS Image Sensor Sensor and Logic Wafer Bonding Process Flow: Integration Principles and Physical Mechanisms
Role in the Complete Flow CMOS image sensors have rapidly grown in market adoption, taking over applications previously dominated by charge-coupled devices due to enhanced…