Technical Blog
Deep dive into the physics and integration logic of semiconductor manufacturing
7nm Metal Gate CMP Mechanism: Physical Chemistry, Planarization Stop Control, and Integration Dynamics
Function in the Complete Flow In advanced replacement metal gate (RMG) FinFET integration, sacrificial poly-silicon dummy gates are removed and replaced with high-k gate…
7nm Dummy Gate Etch Over Fins: Physical Mechanisms, Integration Logic, and Downstream Reliability
Function in the Complete Flow In 7nm Fin-shaped Field-Effect Transistor (FinFET) logic manufacturing using a replacement metal gate (RMG) scheme, dummy gate patterning is a…
14nm FinFET Dummy-Gate Silicon Etch Over Fins: Physical Mechanisms, Profile Control, and Module Integration
Function in the Complete Flow In advanced multi-gate architecture integration, particularly within the 14nm gate template definition, the formation of functional transistor gate…
P-Pinning Implant and Surface-Potential Control in 40nm BSI CIS Integration
Function in the Complete Flow In modern image sensor manufacturing, the formation of the surface pinning layer represents a cornerstone step within the frontside photodiode module.
14nm FinFET Fin Cut Integration Process Flow: Principles, Mechanisms, and Module Dependencies
Role in the Complete Flow The 14nm FinFET fin cut module occupies a critical position in the front-end-of-line (FEOL) sequence, sitting between fin patterning and shallow trench…
14nm FinFET Fin Patterning Process Flow: Integration Principles, Physics, and Module Dependencies
Role in the Complete Flow The 14nm FinFET fin patterning module is the architectural cornerstone of the entire transistor build.
14nm Fin Trench Etch and Fin Recess Integration
What This Module Actually Changes The fin recess integration module sits after isolation formation and before the gate module in the linked 14nm FinFET flow.
14nm FinFET Gate Stack Integration Process Flow: Principles, Mechanisms, and Module Dependencies
Role in the Complete Flow The gate stack integration module for the 14nm FinFET generation occupies a pivotal position in the overall process flow for the 14nm FinFET generation…
14nm FinFET Replacement Metal Gate Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The replacement metal gate (RMG) module occupies a pivotal position in the 14nm FinFET process flow, serving as the bridge between front-end-of-line…
28nm Planar Active-Area Definition Process Flow: Integration Principles and Physical Mechanisms
Role in the Complete Flow In a 28nm planar CMOS process, the active-area (AA) definition module occupies a foundational position in the early front-end-of-line (FEOL) sequence.
28nm Planar Gate Stack Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 28nm planar gate stack integration is one of the most critical modules in the entire 28nm Planar process flow, sitting at the intersection of…
28nm Planar Replacement Metal Gate Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 28nm planar replacement metal gate (RMG) integration is a pivotal module that sits between front-end-of-line (FEOL) transistor formation and…