Technical Blog
Deep dive into the physics and integration logic of semiconductor manufacturing
Principles of Self-Aligned Contact Oxide: Physics, Process Integration, and Advanced Node Scaling
In early planar complementary metal-oxide-semiconductor (CMOS) technology, contact placement was governed primarily by lithographic registration tolerances, where overlay errors…
Controlling Surface Topography in Advanced BEOL: The Physics and Process Principles of Copper Dishing and Erosion
In modern integrated circuit manufacturing, back-end-of-line (BEOL) metallization is responsible for routing electrical signals across billions of transistors.
Demystifying the Pre-Metal Dielectric: Physics, Process Integration, and Advanced Node Evolution
In the fabrication of modern integrated circuits, the boundary between active semiconductor devices and the complex network of metal interconnects represents a critical interface…
Self-Aligned Contacts: Selective Etching, Protective Boundaries and Integration
A self-aligned contact (SAC) uses retained dielectric protection and selective etching to open a source/drain connection while protecting the neighboring gate. Lithography still places the opening. Self-alignment provides tolerance to some pattern overlap; it does not eliminate overlay error or permit unlimited loss of the protective dielectric.
Tungsten in Semiconductor Contacts
Why is tungsten used in semiconductor contacts? Follow the interface, fill and planarization that form an isolated conductive plug.
Vertical Interconnect Access (Via): Physical Principles, Integration Logic, and Advanced Node Evolution
A via connects two wiring levels. Follow the actual Via 1 photo and dielectric etch steps, then compare the earlier contact examples without confusing the two.
Copper Dual Damascene: From Trenches and Vias to Fill and CMP
Copper dual damascene forms a horizontal trench and a connecting via in dielectric, then includes both in one metallization and CMP cycle. “Dual” describes the organization of a line and a via. It does not mean simply etching twice or growing two metal levels at once.