Technical Blog
Deep dive into the physics and integration logic of semiconductor manufacturing
Two-Stage Backside Silicon CMP in BSI Image Sensors: Physics, Integration, and Thickness Control
Function in the Complete Flow In modern image sensor manufacturing, backside illuminated (BSI) architectures have replaced conventional frontside illuminated configurations to…
14nm FinFET Process Flow: Integration Logic, Device Physics, and Module Dependencies
Process Map and Scope The 14nm FinFET process flow represents a defining moment in semiconductor scaling: the second generation of three-dimensional transistors produced in…
14nm FinFET Sidewall Spacer Integration Process Flow: Principles, Mechanisms, and Module Dependencies
Role in the Complete Flow The sidewall spacer module in a 14nm FinFET process flow occupies a pivotal position between gate patterning and source/drain (S/D) epitaxial growth.
14nm FinFET Shallow Trench Isolation Notch Integration: Process Flow Principles and Mechanism Deep Dive
Role in the Complete Flow In the 14nm FinFET technology node, the shallow trench isolation (STI) notch module occupies a uniquely critical position within the broader 14nm FinFET…
14nm FinFET STI Process Flow: Integration Principles, Physical Mechanisms, and Module Dependencies
Role in the Complete Flow In the 14nm FinFET integration architecture, the shallow trench isolation (STI) module establishes the primary dielectric barriers that electrically…
14nm FinFET Starting Wafer and Substrate Preparation: Integration Logic, Physics, and Module Fundamentals
Role in the Complete Flow The 14nm FinFET starting wafer and substrate preparation module — often referred to as the WFR (wafer start) module — is the initial process block in…
28nm Planar Process Flow: Integration Logic, Device Physics, and Module Dependencies
Process Map and Scope The 28nm Planar process flow represents the final major technology generation built on classical planar metal-oxide-semiconductor field-effect transistor…
28nm Planar Redistribution Via and Aluminum Pad Integration: Process Flow Principles and Integration Logic
Role in the Complete Flow The 28nm Planar redistribution via and aluminum pad integration module occupies a critical position near the terminal portion of the back-end-of-line…
28nm Planar Sidewall Spacer Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The sidewall spacer module sits at a critical junction in the 28nm Planar process flow, bridging gate stack formation and source/drain engineering.
28nm Planar Shallow Trench Isolation Process Flow: Principles, Integration Logic, and Mechanisms
Role in the Complete Flow The 28nm Planar shallow trench isolation (STI) module is one of the earliest structural-defining stages in the overall 28nm Planar process flow.
40nm BSI CMOS Image Sensor Process Flow: Integration Principles, Device Physics, and Module Dependencies
Process Map and Scope The 40nm Backside Illumination (BSI) CMOS Image Sensor represents a convergence of advanced CMOS logic fabrication technology with specialized…
40nm BSI CMOS Image Sensor Frontside Deep-Trench Isolation Process Flow: Integration Principles, Device Physics, and Module Dependencies
Role in the Complete Flow The frontside deep-trench isolation (F_DTI) module in a 40nm BSI CMOS image sensor occupies a strategic position between initial active-region…