Mechanically, the polishing pad presses abrasive nanoparticles against the wafer, introducing sliding friction that reduces the maximum Hertzian contact pressure required for plastic deformation [P1].
The M2 Cu CMP process is implemented to planarize the excess copper deposited during M2 copper electrochemical plating and to isolate individual copper interconnect lines [T1][T2][A1]. Without this planarization step, the excess overburden of copper would form a continuous, electrically conductive …
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